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P0806ATF Datasheet - UNIKC

P0806ATF N-Channel MOSFET

P0806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 8.5mΩ @VGS = 10V 57A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C ID 57 TC = 100 °C 36 Pulsed Drain Current IDM 220 Avalanche Current IAS 64 Avalanche Energy L = 0.1mH EAS 202 Power Dissipation TC = 25 °C PD 50 TC = 100 °C 20 Operating Junction & Sto.

P0806ATF Datasheet (329.95 KB)