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P0806ATX Datasheet - UNIKC

P0806ATX N-Channel MOSFET

P0806ATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 8mΩ @VGS = 10V ID 110A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 110 69 300 Avalanche Current IAS 102 Avalanche Energy L = 0.1mH EAS 525 Power Dissipation TC = 25 °C TC = 100 °C PD 166 66 Operating Junction & Storage Tem.

P0806ATX Datasheet (318.57 KB)