P0860ETF Datasheet - UNIKC

P0860ETF N-Channel MOSFET

P0860ETF / P0860ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.05Ω @VGS = 10V 8A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 8 5 25 3.5 61.2 Power Dissipation TC = 25 °C PD 36 TC =.

P0860ETF Datasheet (841.97 KB)