P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current 1 TC = 25 °C TC = 100 °C ID IDM 64 40 150 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Op.