P0908AT Datasheet - UNIKC

P0908AT N-Channel MOSFET

P0908AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 80V 9mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 80 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 64 41 160 Avalanche Current IAS 38 Avalanche Energy L = 0.1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating.

P0908AT Datasheet (544.88 KB)