P0910A Datasheet - UNIKC

P0910A N-Channel MOSFET

P0910AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 80A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 80 50 250 Avalanche Current IAS 72 Avalanche Energy L = 0.3mH EAS 797 Power Dissipation TC = 25 °C TC = 100 °C PD 125 50 Operating Junction & Storage Temp.

P0910A Datasheet (514.80 KB)