P0910ATF Datasheet - UNIKC

P0910ATF N-Channel MOSFET

P0910ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 54A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 54 38 150 Avalanche Current IAS 109 Avalanche Energy L = 0.1mH EAS 597 Power Dissipation TC = 25 °C TC = 100 °C PD 60 30 Operating Junction & Storage T.

P0910ATF Datasheet (348.45 KB)