P0910ATG Datasheet - UNIKC

P0910ATG N-Channel MOSFET

P0910ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 9.5mΩ @VGS = 10V ID 89A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID IDM 89 63 250 Avalanche Current IAS 113 Avalanche Energy L = 0.1mH EAS 647 Power Dissipation TC = 25 °C TC = 100 °C PD 156 62.5 Operating Junction & Storage.

P0910ATG Datasheet (333.70 KB)