P0950ETF - N-Channel MOSFET
P0950ETF / P0950ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 500V 0.88Ω @VGS = 10V 9A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 9 5.7 IDM 36 IAS 4 EAS 80 Power Dissipation TC = 25 °C PD 37 TC
