P1070ETF Datasheet - UNIKC

P1070ETF N-Channel MOSFET

P1070ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 700V 0.91mΩ @VGS = 10V 10A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2,4 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 10 6 IDM 30 IAS 5 EAS 125 Power Dissipation TC = 25 °C PD 46 T.

P1070ETF Datasheet (776.63 KB)