P1003EVG Datasheet - UNIKC

P1003EVG P-Channel Enhancement Mode MOSFET

P1003EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS -30V RDS(ON) 10.5mΩ @VGS = -10V ID -13A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation 1 SYMBOL VDS VGS LIMITS -30 ±25 -13 -9 -50 -49 120 2.5 1.6 -55 to 150 UNITS V TA = 25 ° C TA = 70 ° C ID IDM IAS A L = 0.1mH TA = 25 ° C TA = 70 °.

P1003EVG Datasheet (440.38 KB)