P1004BD - N-Channel Enhancement Mode MOSFET
P1004BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 40V RDS(ON) 10mΩ @VGS = 10V ID 55A TO-252 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range 2 1 SYMBOL VDS VGS LIMITS 40 ±20 55 44 120 38 73 50 32 -55 to 150 UNITS V TC = 25 ° C TC
