P1004BS - N-Channel Enhancement Mode MOSFET
P1004BS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 40V 11mΩ @VGS = 10V 53A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C ID 53 TC = 100 °C 34 IDM 159 Avalanche Current IAS 40 Avalanche Energy L = 0.1mH EAS 82 Power Dissipation TC = 25 °C PD 63 TC = 100 °C 25 Junction & Storage Temperat
