P1004HV - N-Channel MOSFET
P1004HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 40V 13mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ±24 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 40 Avalanche Current Avalanche Energy2 L = 0.1mH IAS EAS 38 71 Power Dissipation TA = 25 °C TA = 70 °C PD 2 1.28 Operating J
