P1103BEA Datasheet - UNIKC

P1103BEA MOSFET

P1103BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 11mΩ @VGS = 10V ID 37A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 37 Continuous Drain Current1,2 TC = 100 °C TA = 25 °C ID 23 12 Pulsed Drain Current1 TA = 70 °C IDM 9 100 Avalanche Current IAS 30 Avalanche Energy L = 0.1mH EAS 45 TC = 25 °C 26 Power .

P1103BEA Datasheet (450.47 KB)