P1103BVG Datasheet - UNIKC

P1103BVG N-Channel MOSFET

P1103BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 11mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 11 10 100 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 2.0 Junctio.

P1103BVG Datasheet (288.26 KB)