P1120EDB Datasheet - UNIKC

P1120EDB N-Channel MOSFET

P1120EDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V 280mΩ @VGS = 10V ID 11A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 11 6.7 33 Avalanche Current IAS 13 Avalanche Energy L = 1mH EAS 84.5 Power Dissipation TC = 25 °C TC = 100 °C PD 69 27 Junct.

P1120EDB Datasheet (763.95 KB)