P117AATX Datasheet - UNIKC

P117AATX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75V 11mΩ @VGS = 10V 80A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ±20 Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C TC = 100 °C ID 80 70 IDM 320 Avalanche Current IAS 46 Avalanche Energy L = 1mH EAS 1082 Power Dissipation TC = 25 °C PD 300 TC = 100 °C