P1160ZT Datasheet - UNIKC

P1160ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 390mΩ @VGS = 10V 11A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 11 7 IDM 40 IAS 3 EAS 180 Power Dissipation TC = 25 °C TC = 100 °C PD 104 41 Operating