P1603BD Datasheet - UNIKC

P1603BD N-Channel MOSFET

P1603BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 14mΩ @VGS = 10V ID 40A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 40 32 150 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 26 Power Dissipation TC= 25 °C TC= 100°C PD 42 27 Junction & Stor.

P1603BD Datasheet (510.01 KB)