P1603BEX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3 24A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
24
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
15 8
Pulsed Drain Current1
TA= 70 °C
IDM
6.3 60
Avalanche Current
IAS 20.5
Avalanche Energy
L = 0.1mH
EAS
21
TC = 25 °C
15
Power Dissipation
TC = 100 °C TA = 25 °C
PD
6 1.