P1603BEX Datasheet - UNIKC

P1603BEX MOSFET

P1603BEX N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 24 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 15 8 Pulsed Drain Current1 TA= 70 °C IDM 6.3 60 Avalanche Current IAS 20.5 Avalanche Energy L = 0.1mH EAS 21 TC = 25 °C 15 Power .

P1603BEX Datasheet (755.62 KB)