P1603BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 10 8 55 Avalanche Current IAS 23 Avalanche Energy L = 0.1mH EAS 26 Power Dissipation TA = 25 °C TA = 70 °C PD 2.6 1.6 Operating Junction & Storage Temperatur.