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P1603BEBB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 16mΩ @VGS = 10V
ID3 24A
PDFN 2X2S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3
Pulsed Drain Current1 Avalanche Current
TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C
ID
IDM IAS
24 15 8.2 6.6 70 20.5
Avalanche Energy
L = 0.1 mH
EAS
21
TC = 25 °C
15
Power Dissipation
TC = 100 °C TA= 25 °C
TA= 70°C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
6.2 1.8 1.
P1603BEBB Datasheet
