P1603BEBB Datasheet - UNIKC

P1603BEBB MOSFET

P1603BEBB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 24A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 24 15 8.2 6.6 70 20.5 Avalanche Energy L = 0.1 mH EAS 21 TC = 25 °C 15 Power Diss.

P1603BEBB Datasheet (656.05 KB)