P1603BEB Datasheet - UNIKC

P1603BEB MOSFET

P1603BEB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID3 21A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 21 Continuous Drain Current3 Pulsed Drain Current1 Avalanche Current TC = 100 °C TA = 25 °C TA= 70 °C ID IDM IAS 17 8 6 60 18 Avalanche Energy L = 0.1 mH EAS 16 TC = 25 °C 16 Power Dissipati.

P1603BEB Datasheet (201.07 KB)