P1604ED Datasheet - UNIKC

P1604ED P-Channel MOSFET

P1604ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -43A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -43 -34 -130 Avalanche Current IAS -40.8 Avalanche Energy L = 0.1mH EAS 83 Power Dissipation TC = 25 °C TC = 100 °C PD 50 3.

P1604ED Datasheet (568.64 KB)