P1604ETF Datasheet (UNIKC) - P-Channel Enhancement Mode MOSFET

P1604ETF, P-Channel Enhancement Mode MOSFET

P1604ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 16mΩ @VGS = -10V ID -40A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -40 -25 -120 Avalanche Current IAS -40 Avalanche Energy L = 0.1mH EAS 78 Power Dissipation TC = 25 °C PD 42 TC = 100