P2060ZT Datasheet - UNIKC

P2060ZT N-Channel MOSFET

P2060ZT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 190mΩ @VGS = 10V 20A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID 20 12 IDM 59 IAS 4 EAS 320 Power Dissipation TC = 25 °C TC = 100 °C PD 48 19 Operating.

P2060ZT Datasheet (737.35 KB)