P2003BEA Datasheet - UNIKC

P2003BEA MOSFET

P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage TC = 25 °C VDS VGS 30 ±20 28 Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy TC = 100 °C TA = 25 °C TA = 70 °C L = 0.1mH TC = 25 °C ID IDM IAS EAS 18 10 8 70 21.5 23 25 Power Dissipation TC .

P2003BEA Datasheet (314.14 KB)