P2003BVT Datasheet - UNIKC

P2003BVT N-Channel MOSFET

P2003BVT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 9A SOP-8 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 35 Avalanche Current IAS 8 Avalanche Energy L =0.1mH EAS 3.2 Power Dissipation TA= 25 °C TA =70 .

P2003BVT Datasheet (523.10 KB)