P2003BEAA Datasheet - UNIKC

P2003BEAA MOSFET

P2003BEAA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 25 Continuous Drain Current Tc = 100 °C TA = 25 °C ID 16 8 Pulsed Drain Current1 TA= 70 °C IDM 6 60 Avalanche Current IAS 17 Avalanche Energy L =0.1mH EAS 15 TC = 25 °C 20 Power Dissip.

P2003BEAA-UNIKC.pdf