P2003BE Datasheet - UNIKC

P2003BE MOSFET

P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 25 Continuous Drain Current TC = 100 °C TA = 25 °C ID 15 7 Pulsed Drain Current1 TA = 70 °C IDM 5.7 50 Avalanche Current IAS 18 Avalanche Energy L = 0.1mH EAS 16 TC = 25 °C 21 Power Dissi.

P2003BE-UNIKC.pdf