P2003BDG Datasheet - UNIKC

P2003BDG N-Channel MOSFET

P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 20mΩ @VGS = 10V ID 28A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 28 18 90 Avalanche Current IAS 23 Avalanche Energy L=0.1mH EAS 26 Power Dissipation TC= 25 °C TC= 100°C PD 27 10 Ope.

P2003BDG Datasheet (444.37 KB)