P2610BT Datasheet - UNIKC

P2610BT N-Channel MOSFET

P2610BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8mΩ @VGS = 10V 36A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 36 23 IDM 70 Avalanche Current IAS 11 Avalanche Energy L = 0.1mH EAS 6 Power Dissipation TC = 25 °C PD 83 TC = 100 °C 3.

P2610BT Datasheet (415.97 KB)