P2610BTF Datasheet - UNIKC

P2610BTF N-Channel MOSFET

P2610BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 26.8mΩ @VGS = 10V 24A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 24 15 IDM 70 Avalanche Current IAS 11.7 Avalanche Energy L = 0.1mH EAS 6.9 Power Dissipation TC = 25 °C PD TC = 100 °C .

P2610BTF Datasheet (746.56 KB)