P5103EMA Datasheet - UNIKC

P5103EMA P-Channel MOSFET

P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 51mΩ @VGS = -10V ID -3.8A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -3.8 -3 -20 Power Dissipation TA = 25 °C TA = 70 °C PD 1 0.7 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNI.

P5103EMA-UNIKC.pdf