P6003QEA Datasheet - UNIKC

P6003QEA MOSFET

P6003QEA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 24mΩ @VGS = 10V -30V 60mΩ @VGS = -10V ID 20A -12A Channel N P PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 VDS P -30 Gate-Source Voltage N ±20 VGS P ±20 TC = 25 °C N 20 P -12 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID N 13 P -8 N 7.3 P -4.3 TA = 70 °C N 5.8 P -3.4 Pulsed Drain Current1.

P6003QEA Datasheet (303.48 KB)