P6004ED Datasheet - UNIKC

P6004ED P-Channel MOSFET

P6004ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 60mΩ @VGS = -10V ID -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -16 -80 Avalanche Current IAS -20 Avalanche Energy L = 0.1 mH EAS 19.5 Power Dissipation TC = 25 °C TC = 100 °C PD 42 2.

P6004ED Datasheet (555.90 KB)