P6006BD Datasheet - UNIKC

P6006BD N-Channel Transistor

P6006BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 60mΩ @VGS = 10V ID 21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 21 17 85 Power Dissipation TC = 25 °C TC = 100 °C PD 50 32 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNIT.

P6006BD Datasheet (470.57 KB)