P6010DDG Datasheet - UNIKC

P6010DDG N-Channel Transistor

P6010DDG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 60mΩ @VGS = -10V ID -20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -20 -12 -60 Avalanche Current IAS -54 Avalanche Energy L = 0.1mH EAS 149 Power Dissipation TC = 25 °C TC = 100.

P6010DDG Datasheet (390.48 KB)