P6006HV Datasheet - UNIKC

P6006HV Dual N-Channel MOSFET

P6006HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 60mΩ @VGS = 10V ID 4.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 4.5 3.2 20 Avalanche Current IAS 18 Avalanche Energy L =0.1mH EAS 16 Power Dissipation TA = 25 °C TA= 70°C PD 2 1.28 Junctio.

P6006HV Datasheet (442.88 KB)