P8010BT Datasheet - UNIKC

P8010BT N-Channel MOSFET

P8010BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 85mΩ @VGS = 10V 17A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 17 10 IDM 35 Avalanche Current Avalanche Energy2 IAS 13 EAS 8.5 Power Dissipation TC = 25 °C TC = 100 °C PD 54 21 Junction &.

P8010BT Datasheet (714.06 KB)