P8010BTF Datasheet - UNIKC

P8010BTF N-Channel MOSFET

P8010BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 85mΩ @VGS = 10V 11A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID 11 7 IDM 35 Avalanche Current IAS 14 Avalanche Energy L = 0.1mH EAS 10 Power Dissipation TC = 25 °C PD 24 TC = 100 °C 9.

P8010BTF Datasheet (756.34 KB)