PD537BA Datasheet - UNIKC

PD537BA P-Channel MOSFET

PD537BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 8mΩ @VGS = -10V ID 71A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±25 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 71 45 160 Avalanche Current IAS 36 Avalanche Energy L = 0.1mH EAS 64.8 Power Dissipation TC= 25 °C TC= 100°C PD 73 29 Junctio.

PD537BA Datasheet (759.80 KB)