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PD563BA Datasheet - UNIKC

PD563BA P-Channel MOSFET

PD563BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 15mΩ @VGS = -10V ID -46A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM -46 -29 -130 Avalanche Current IAS -34 Avalanche Energy L = 0.1mH EAS 57.8 Power Dissipation TC= 25 °C TC= 100°C PD 62.5 25 .

PD563BA Datasheet (774.14 KB)