PD5E8BA Datasheet - UNIKC

PD5E8BA N-Channel MOSFET

PD5E8BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 45mΩ @VGS = 10V ID 16A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 16 10 35 Avalanche Current IAS 10 Avalanche Energy L = 0.1mH EAS 5 Power Dissipation TC = 25 °C TC = 100 °C PD 20 8 Junction & .

PD5E8BA Datasheet (776.70 KB)