PE5C6JZ Datasheet - UNIKC

PE5C6JZ MOSFET

PE5C6JZ Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 24V 5.5mΩ @VGS = 4.5V ID 54A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 24 Gate-Source Voltage VGS ±12 TC = 25 °C 54 Continuous Drain Current2 TC = 100 °C TA = 25 °C ID 34 16 Pulsed Drain Current1 TA= 70 °C IDM 13 90 Avalanche Current IAS 28 Avalanche Energy L =0.1mH EAS 39 TC = 25 °C 27 Powe.

PE5C6JZ Datasheet (934.72 KB)