PE5E4BA Datasheet (UNIKC)

PE5E4BA, MOSFET

PE5E4BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.5mΩ @VGS = 10V ID 31A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 31 19 90 Continuous Drain Current TA = 25 °C TA = 70 °C ID 10 8 Avalanche Current IAS 22 Avalanche Energy L =0.1mH EAS 24