Description
The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
Features
- S.
- RDS(ON) ≤ 2.2 Ω @ VGS=10V, ID=2.5A.
- Ultra Low Gate Charge ( Typical 15 nC ).
- Low Reverse Transfer Capacitance ( CRSS = Typical 6.5 pF ).
- Fast Switching Capability.
- Avalanche Energy Specified.
- Improved dv/dt Capability, High Ruggedness.
- SYMBOL
Power MOSFET
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QW-R502-065.O
5N60
Power MOSFET.
5N60_UTC.pdf
