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10N60Z-Q Datasheet - Unisonic Technologies

10N60Z-Q N-CHANNEL POWER MOSFET

The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in.

10N60Z-Q Features

* RDS(ON) < 0.8Ω@VGS =10V

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* SYMBOL Power MOSFET

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 10N60ZL-TF1-T 10N60ZG-TF1-T Note: Pin Assignment: G: Gate D: Drain S: Source Pac

10N60Z-Q-UnisonicTechnologies.pdf

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Datasheet Details

Part number:

10N60Z-Q

Manufacturer:

Unisonic Technologies

File Size:

188.45 KB

Description:

N-channel power mosfet.

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TAGS

10N60Z-Q 10N60Z-Q N-CHANNEL POWER MOSFET Unisonic Technologies

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