CHA3667aQDG Datasheet - United Monolithic Semiconductors

CHA3667aQDG 7-20GHz Medium Power Amplifier

The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a PowerpHEMT process, 0.15µm gate length, via hole through the substrate. It is ESD protected on RF p.

CHA3667aQDG Features

* Broadband performance 7-20GHz

* Self-biased

* 23dB gain @ 2.7dB noise figure

* 20dBm Output power @1dBcp

* DC power consumption, 175mA @ 4.2V

* 24L-QFN4X4 SMD package

* MSL1 UMS A3667A YYWW RFin Vd RFout Main Characteristics Tamb = +25°C, Vd= 4.2V Symbol Paramet

CHA3667aQDG-UnitedMonolithicSemiconductors.pdf

CHA3667aQDG Datasheet Preview — Preview of CHA3667aQDG PDF

Datasheet Details

Part number:

CHA3667aQDG

Manufacturer:

United Monolithic Semiconductors

File Size:

348.05 KB

Description:

7-20ghz medium power amplifier.

CHA3667aQDG Distributor

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CHA3667aQDG CHA3667aQDG 7-20GHz Medium Power Amplifier United Monolithic Semiconductors